Light emitting diode device having uniform current distribution and method for forming the same

ABSTRACT

A semiconductor is disclosed. The semiconductor may include a transparent layer having a first surface. The semiconductor may further include a first doped layer formed over the first surface of the transparent layer. The first doped layer may have a plurality of first-type metal electrodes formed thereon. The semiconductor may further include a second doped layer formed over the first surface of the transparent layer. The second doped layer may have a plurality of second-type metal electrodes formed thereon. The semiconductor may also include an active layer formed over the first surface of the transparent layer and disposed between the first doped layer and the second doped layer. The first-type metal electrodes and the second-type metal electrodes may be alternately arranged and the distances between each first-type metal electrode and its adjacent second-type metal electrodes may be substantially equal.

TECHNICAL FIELD

The present disclosure relates generally to a light emitting diode (LED)device, and relates more particularly to an LED device with a generallyuniform electrode distribution and a method for forming the same.

BACKGROUND

LED devices have been widely used as low-energy replacements fortraditional light sources. In particular, with the development ofgallium nitride (GaN) LEDs that emit high illumination of a blue/greenlight, the fall-color LED display, white light LED, and LED's fortraffic signals have all been introduced into the market. However,compared with traditional light sources, LED devices require moreprecise current and heat management. For example, the low thermalconductivity of sapphire usually creates high serial thermal resistancein an LED device.

Flip-chip LED devices are developed to improve the heat dissipation andcurrent diffusion of conventional LED devices. For example, flip-chipLED devices may include a surface mount substrate, such as a siliconsubstrate, to improve thermal conductivity, especially in high powerapplications. In addition, layout of LED dies in flip-chip LED devicesis usually designed to improve current diffusion and distribution. Forexample, the layout of the LED dies is designed such that patternedmetal lines of p-electrodes and n-electrodes are utilized for conductingcurrent. Furthermore, the p-electrodes and n-electrodes are usuallydisposed around the lateral surfaces of the LED dies, or bothp-electrodes and n-electrodes are disposed in a common area.

FIG. 1 shows a layout of p-electrodes and n-electrodes in a conventionalLED device 100, according to a conventional design. LED device 100 mayinclude multiple p-electrodes and n-electrodes arranged in lines. Forexample, as shown in FIG. 1, LED device 100 may include two lines ofn-electrodes at the left and right edges respectively, and three linesof p-electrodes in between. The p-electrodes and n-electrodes arearranged alternately such that each p-electrode (e.g., p-electrode 101)is on a central line between two adjacent n-electrodes, e.g.,n-electrodes 107 and 108 and each n-electrode (e.g., n-electrode 108) ison a central line between two adjacent p-electrodes (e.g., p-electrodes109 and 110). However, the distances between the closest p-electrodesand the n-electrodes are not constant. For example, the distance betweenp-electrode 101 and n-electrode 107 is different from the distancebetween p-electrode 101 and n-electrode 109 or 110. Further, thedistance between n-electrode 108 and p-electrode 104 is different fromthe distance between n-electrode 108 and n-electrode 105 or 106.

Although LED device 100 as shown in FIG. 1 may effectively improve thecurrent and heat management compared to conventional LED devices, it maynevertheless be sub-optimal. For example, due to the non-uniformdistances, the paths of applied current distributed within LED device100 have different lengths, and the intervals between the electroncurrent paths are also different. Consequently, the internal serialresistances along the current paths are different. Therefore, differentpotential differences may be formed at different electrode pairs andnon-uniform current distributions will occur in LED device 100. Forexample, the electrode pair 101-104 may have a different potentialdifference from the electrode pair 101-105. Such current diffusiondifficulty and distribution non-uniformity may cause reduction inbrightness and light emission efficiency of GaN blue or green LEDs.

Forming a transparent current diffusion layer on the top surface of ap-GaN layer may improve the current distribution in an LED device tosome extent. With such a structure, the current may inject into thecurrent diffusion layer after passing through the metal electrode.However, the current density in the area under the metal electroderemains higher than that under the current diffusion layer, and mostcurrent fluxes jam in the area under the metal electrode. Therefore,there is a need to further improve the contact resistances between thecurrent diffusion layer and p-GaN layer.

The apparatus and method of the present disclosure are directed towardsovercoming one or more of the constraints set forth above.

SUMMARY

In one aspect, the present disclosure is directed to a semiconductor.The semiconductor may include a transparent layer having a firstsurface. The semiconductor may further include a first doped layerformed over the first surface of the transparent layer. The first dopedlayer may have a plurality of first-type metal electrodes formedthereon. The semiconductor may further include a second doped layerformed over the first surface of the transparent layer. The second dopedlayer may have a plurality of second-type metal electrodes formedthereon. The semiconductor may also include an active layer formed overthe first surface of the transparent layer and disposed between thefirst doped layer and the second doped layer. The first-type metalelectrodes and the second-type metal electrodes may be alternatelyarranged and the distances between each first-type metal electrode andits adjacent second-type metal electrodes may be substantially equal.

In another aspect, the present disclosure is directed to a flip-chiplight emitting diode (LED) package structure. The flip-chip LED packagestructure may include a package substrate, and an LED device. The LEDdevice may include a transparent layer having a first surface and asecond surface opposite to the first surface. The LED device may furtherinclude a first doped layer formed over the first surface of thetransparent layer. The first doped layer may have a plurality offirst-type metal electrodes formed thereon. The LED device may furtherinclude a second doped layer formed over the first surface of thetransparent layer. The second doped layer may have a plurality ofsecond-type metal electrodes formed thereon. The LED may also include anactive layer formed over the first surface of the transparent layer anddisposed between the first doped layer and the second doped layer. Thefirst-type metal electrodes and the second-type metal electrodes may bealternately arranged and the distances between each first-type metalelectrode and its adjacent second-type metal electrodes may besubstantially equal. The LED device may be faced-down and flipped on thepackage substrate with the second surface of the transparent layerfacing away from the package substrate. The LED device may beelectrically connected to the package substrate through the first-typemetal electrodes and the second-type metal electrodes.

In yet another aspect, the present disclosure is directed to a methodfor forming a semiconductor. The method may include providing atransparent layer having a first surface. The method may further includeforming a first doped layer over the first surface of the transparentlayer. The first doped layer may have a plurality of first-type metalelectrodes formed thereon. The method may further include forming anactive layer over the first surface of the transparent layer. The methodmay also include forming a second doped layer over the first surface ofthe transparent layer. The second doped layer may have a plurality ofsecond-type metal electrodes formed thereon. The first-type metalelectrodes and the second-type metal electrodes may be alternatelyarranged and the distances between each first-type metal electrode andits adjacent second-type metal electrodes may be substantially equal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a layout of p-electrodes and n-electrodes in a conventionalLED device, according to a conventional design;

FIG. 2 shows a cross-section view of an LED die, according to anexemplary embodiment of the present disclosure;

FIG. 3 shows a layout of LED dies in a semiconductor, according to anexemplary embodiment of the present disclosure;

FIG. 4 shows a layout of LED dies in a wire-bonding semiconductor,according to an exemplary embodiment of the present disclosure;

FIG. 5 shows a distribution of p-electrodes and n-electrodes in asemiconductor comprising multiple LED dies, consistent with thedisclosed embodiments shown in FIGS. 4 and 5;

FIG. 6A shows an LED structure, according to a conventional design;

FIG. 6B shows an LED structure, according to an exemplary embodiment ofthe present disclosure;

FIG. 7 shows a distribution of electron current in a semiconductor,consistent with the disclosed embodiments shown in FIG. 5 and FIG. 6B;

FIG. 8 shows a cross-section view of a flip-chip LED device, accordingto an exemplary embodiment of the present disclosure;

FIG. 9 is a flow chart of an exemplary operation process for forming asemiconductor and a flip-chip LED device, consistent with the disclosedembodiments shown in FIGS. 2-4.

To the extent that any of the above figures note dimensions, thesedimensions are for illustrative purposes only and do not serve to limitthe scope of the invention.

DETAILED DESCRIPTION

Reference will now be made in detail to various embodiments, which areillustrated in the accompanying drawings. Wherever possible, the samereference numbers will be used throughout the drawings to refer to thesame or like parts.

FIG. 2 shows a cross-section view of an LED die 200, according to anexemplary embodiment of the present disclosure. LED die 200 may include,among other things, a transparent layer 201, an n-type doped layer 202,an n-electrode 203, an active layer 204, a p-type doped layer 205, alight-transmitting layer 206, and a p-electrode 207. Transparent layer201 can be a conducting or non-conducting substrate. Transparent layer201 may include materials that have high refractive indices such thatlight will be reflected back into the material at the material/airsurface interface. In some embodiments, the material of transparentlayer 201 may be selected from a group consisting of silicon, siliconcarbide, sapphire, arsenide, phosphide, zinc oxide (ZnO), and magnesiumoxide. For example, GaN/InGaN LEDs may use a sapphire substrate.

N-type doped layer 202, active layer 204, p-type doped layer 205, andlight-transmitting layer 206 may be formed, for example, by performing aseries of epitaxy processes sequentially on transparent layer 201. Thematerial of n-type doped layer 202 and p-type doped layer may comprise aIII-V group compound of semiconductor material, for example, anindium-containing nitride (such as InGaN) semiconductor, analuminum-containing nitride (such as AlGaN) semiconductor, or agallium-containing nitride (Such as GaN) semiconductor. For example,blue LEDs are usually based on the wide band-gap semiconductors GaN andInGaN. N-electrode 203 may be a piece of n metal electrically connectedwith n-type doped layer 202. Similarly, p-electrode 20 may be a piece ofp metal electrically connected with p-type doped layer 205.

The active layer 204 may include, for example, a single or amulti-quantum well structure to enhance the light emitting efficiency.The one or more InGaN quantum wells may be positioned between n-typedoped layer 202 and p-type doped layer 205. In some embodiments, byvarying the relative InN—GaN fraction in the InGaN quantum wells, thelight emission can be varied from, for example, violet to amber. Forexample, Green LEDs may be manufactured from the InGaN—GaN system.

Light-transmitting layer 206 may be formed between p-type doped layer205 and p-electrode 206. In some embodiments, a material of thelight-transmitting layer 206 may include an indium tin oxide (ITO), butalso may include for example, materials such as ITO, CTO, IZO, ZnO:Al,ZnGa₂O₄, SnO₂:Sb, Ga₂O₃:Sn, AgInO₂:Sn, In₂O₃:Zn, CuAlO₂, LaCuOS, NiO,CuGaO₂, SrCu₂O₂, or other transparent conductive material having similarproperties.

In some embodiments, multiple LED dies 200 may be formed on a commontransparent layer 201, and arranged to form a certain pattern. FIG. 3shows a layout of LED dies in a semiconductor 300, according to anexemplary embodiment of the present disclosure. As shown in FIG. 3, theLED dies are arranged such that the p-electrodes and n-electrodes aredisposed on semiconductor 300 in an alternating manner. Each p-electrode(e.g., p-electrode 31) is in the center of four adjacent n-electrodes(e.g., n-electrodes 32-35), and each n-electrode (e.g., n-electrode 35)is on a central line between two adjacent p-electrodes (e.g.,p-electrodes 31, and 36-38). Therefore, the distances between eachp-electrode and its closest n-electrodes are about the same, and thedistances between each n-electrode and its closest p-electrode are alsoabout the same. For example, the distance between p-electrode 31 andeach of n-electrodes 32-35 is about the same.

Furthermore, as shown in FIG. 3, the distances between every twoadjacent p-electrodes are about the same, as well as the distancesbetween every two adjacent n-electrodes. For example, the distancebetween p-electrodes 31 and 36 is about the same as the distance betweenp-electrodes 31 and 38. Similarly, the distance between n-electrodes 32and 33 is about the same as the distance between p-electrodes 32 and 34.In some embodiments, as long as the p-electrodes and n-electrodes areabout equal-distanced, as shown in FIG. 3, the locations of thep-electrodes and n-electrodes can be interchanged.

FIG. 4 shows a layout of LED dies in a wire-bonding semiconductor 400,according to an exemplary embodiment of the present disclosure. As shownin FIG. 4, wire-bonding semiconductor 400 may also include multiple LEDdies arranged in an alternating manner as in FIG. 3. In addition,wire-bonding semiconductor 400 may further include a first patternedmetal line 410 connecting the n-electrodes, and a second patterned metalline 420 connecting the n-electrodes. In some embodiments, firstpatterned metal line 410 may comprise metal material the same as in then-electrodes, and electrically connect two or more n-electrodes (such asn-electrodes 42-45). Similarly, second patterned metal line 420 maycomprise metal material the same as in the p-electrodes, andelectrically connect two or more p-electrodes (such as p-electrodes 41and 46-48). Although in FIG. 3 and FIG. 4, the distances betweenp-electrodes and n-electrodes are illustrated as equal, it iscontemplated that in practice the distances may be about equal withsmall variations.

FIG. 5 shows a distribution of p-electrodes and n-electrodes in asemiconductor comprising multiple LED dies, consistent with thedisclosed embodiments shown in FIGS. 4 and 5. As shown in FIG. 5,p-electrodes and n-electrodes are arranged alternately with about equaldistances between each p-n electrode pair. Accordingly, an equivalentcircuit may be formed by the equivalent potential based on the constantpotential difference between each p electrode and each n electrode thatforms a p-n pair.

For example, as shown in FIG. 5, a represents the distance between everytwo adjacent p-electrodes (such as between p-electrodes 1 and 2, as wellas p-electrodes 1 and 4) and b represents the interval between twoadjacent n metal electrodes (such as between n-electrodes 12 and 8, aswell as p-electrodes 12 and 13). c and d represent the distances betweenadjacent p and n metal electrodes. For example, c represents thedistance between each p-electrode (such as p-electrode 5) and the fourn-electrodes (such as n-electrodes 3 and 6-8) surrounding it. drepresents the distance between each n-electrode (such as n-electrode 3)and the four n-electrodes (such as n-electrodes 1, 2, 4 and 5)surrounding it. Consistent with the embodiments disclosed in FIG. 3 andFIG. 4, a is designed to be about equal to b, and c is designed to beabout equal to d.

Based on the electrodes arrangement, semiconductors 300 and 400 can beseen as an assembly of numerous parallel sub-dies, where eachp-electrode has an approximately equal potential and each n-electrodealso has an approximately equal potential. That is, V₁=V₂=V₄=V₅=C_(p),and V₃=V₆=V₇=V₈=C_(n), where C_(p) is a constant voltage for thep-electrodes and C_(n) is a constant voltage potential for then-electrodes. Accordingly, the potential difference between each p-nelectrode pair becomes a constant valueΔV=V₁−V₃=V₂−V₃=V₄−V₃=V₅−V₃=V₅−V₆=V₅−V₇=V₅−V₈. It is contemplated that inembodiments where the distances between p-electrodes and n-electrodesare substantially equal with small variations, the voltage potential forthe p-electrodes, voltage potential for the n-electrodes, as well as thepotential difference between each p-n electrode pair may besubstantially constant with small variations.

FIG. 6A shows an LED structure 600 according to a conventional design,as contrasted with FIG. 6B that shows an LED structure 610 according toan exemplary embodiment of the present disclosure. As shown in FIG. 6A,in prior art LED structure 600, p-electrode 601 is of a differentthickness and occupies a different area as n-electrode 602. As a result,LED structure 600 may have a higher cracking possibility and a higherheat stress. In comparison, as shown in FIG. 6A, LED structure 610consistent with the present disclosure include p-electrodes 603 andn-electrodes 604 that are of substantially the same thickness and occupysubstantially the same areas. Furthermore, each electrode of LEDstructure 610 is smaller in volume than that of LED structure 600.Consequently, heat stress and cracking possibility may be reduced, andLED structure 610 may have more flexibility in various designapplications.

FIG. 7 shows a distribution of electron current in a semiconductor 700,consistent with the disclosed embodiments shown in FIG. 5 and FIG. 6B.As shown in FIG. 7, with the about equal potential distributions ofp-electrodes (701 and 702) and n-electrodes (703) consistent with FIG.5, and the structural design consistent with FIG. 6B, the current flowcan pass through the LED die from a single input point to a singleoutput point. Therefore, the potential difference between the p and nelectrodes can be secured, and the current may more uniformly distributeand disperse in each p-n junction formed between each p-n electrodepair. For example, the current paths between p-electrode 701 andn-electrode 703, as well as p-electrode 702 and n-electrode 703,distribute more uniformly under each of electrodes 701-703.Consequently, the light emission efficiency of the LED dies may beimproved.

The layout LED dies as shown in FIG. 3 may be applied in forming aflip-chip LED package structure. FIG. 8 shows a cross-section view of aflip-chip LED device 800, according to an exemplary embodiment of thepresent disclosure. Flip-chip LED device 800 may include, among otherthings, a semiconductor 300 as disclosed in FIG. 3 consisting of atransparent layer 801, a n-type doped layer 802, a plurality ofn-electrodes 803, a p-type doped layer 804, a plurality of p-electrodes805. In some embodiments, flip-chip LED device may further include aactive layer (not shown) located between the n-type doped layer 802 andthe p-type doped layer 804. Flip-chip LED device 800 may further includea package substrate 810, a metal bump layer 806 including a plurality ofmetal bumps, a pad layer 807, and a passivation layer 809.

In some embodiments, semiconductor 300 including LED dies of FIG. 2 maybe faced-down and flipped over package substrate 810 such that theplurality of n-electrodes 803 and the plurality of p-electrodes 805 arefacing package substrate 810, and transparent layer 801 is facing awayfrom package substrate 810. Transparent layer 801 may include, forexample, a silicon carbide, a sapphire, a GaN and a AlGaInN substrate.The package substrate 810, for example, may include but not limited,ceramic substrate, Al₂O₃ substrate, AlN substrate, and siliconsubstrate.

Semiconductor 300 and package substrate 810 are electrically connectedvia metal bump layer 806 and pad layer 807. For example, as shown inFIG. 8, the plurality of n-electrodes 803 are electrically connected topackage substrate 810 via a plurality of metal bumps. The plurality ofp-electrodes 805 are electrically connected to package substrate 810 viaa plurality of metal bumps and gold or other types of eutectic studbumps. Consistent with the disclosed embodiments, metal bump layer 806and pad layer 807 may also be used in the flip-chip LED packagestructure 800 as current conduction paths and heat dissipation paths tofurther improve the reliability of the LED device. In some embodiments,flip-chip LED package structure 800 may also include a passivation layer809 formed on n-type doped layer 802.

FIG. 9 is a flow chart of an exemplary operation process 900 for forminga semiconductor 300 and a flip-chip LED device 800, consistent with thedisclosed embodiments shown in FIGS. 2-4. In some embodiments, process900 may include a sub-process 91 for forming semiconductor 300 and asub-process 92 for forming flip-chip LED device 800. Althoughsub-process 91 and sub-process 92 are described collectively inconnection with process 900, it is contemplated that each of thesub-processes may be performed separately and independently from eachother.

Process 900 may start with providing a transparent layer 201 (stage911). In stage 912, a first doped layer, such as a n-type doped layer202, may be formed on transparent layer 201. In stage 913, an activelayer 204 having multi-quantum wells may be formed on the first dopedlayer. In stage 914, a second doped layer, such as a p-type doped layer205, may be formed on active layer 204. Consistent with someembodiments, stages 911-914 may use materials that have high refractiveindices such that much light will be reflected back into the material atthe material/air surface interface. In some embodiments, stages 911-914may be performed by epitaxy processes.

In stage 915, metal electrodes are formed on the respective dopedlayers. For example, n-electrodes are formed on n-type doped layer 202and p-electrodes are formed on p-type doped layer 205. In someembodiments, following stages 911-915, a portion of the n-type dopedlayer 202, a portion of the active layer 204 and a portion of the p-typedoped layer 205 are removed, for example but not limited to, by etchingor by another method. Therefore, each of the layers 202, 204, and 205are patterned to form a plurality of isolated island structure.Consistent with some embodiments, in the isolated island structureabove, a portion of the p-type doped layer 205, active layer 204 and aportion of n-type doped layer 202 are removed, such that then-electrodes are electrically connected with n-type doped layer 202 andthe p-electrodes are electrically connected with p-type doped layer 205.

Consistent with embodiments of the present disclosure, the p-electrodesand n-electrodes are formed in an alternating manner such that thedistances between each p-electrode and its adjacent n-electrodes aresubstantially constant. The distances between every two adjacentp-electrodes, as well as every two adjacent n-electrodes, are alsosubstantially constant. In some embodiments, a line of p-electrodes maybe formed first, and a line of n-electrodes may be formed next to thep-electrodes. Each n-electrode may be formed on a central line of twoadjacent p-electrodes and the vertical distance between the n-electrodesto the line across the p-electrodes may be set as half of the distancebetween every two adjacent p-electrodes. Then another line ofp-electrodes may be formed next to the line of n-electrodes, where thedistance between the new line of p-electrodes and the first line ofp-electrodes may be substantially equal to the distance between everytwo adjacent p-electrodes.

Consistent with some embodiments, such as the embodiment disclosed inconnection with FIG. 4, one or more metal paths may be formed toelectrically connect the p-electrodes or the n-electrodes (stage 916).Stage 916 may be optional in performing process 900. For example,semiconductor 300 may be formed without stage 916, and semiconductor 400may be formed with stage 916. After stage 916, sub-process 91 mayconclude.

Sub-process 92 may start with providing a package substrate 810 (stage921). In stage 922, metal bump layer 806 having a plurality of metalbumps may be formed on package substrate 810. In stage 923, pad layer807 having a plurality of gold bud bumps may be selectively formed onmetal bump layer 806. Therefore, an insulating material is filledbetween layers 802, 803, 804, 805 and 806 to form a passivation layer809.

In stage 924, the semiconductor formed by stages 911-915 may be flippedon metal bump layer 806 and pad layer 807, with the electrodes facingpackage substrate 810 and transparent layer 201 facing away from packagesubstrate 810. In stage 925, the semiconductor may be electricallyconnected to package substrate 810. Consistent with some embodiments,the p-electrodes and n-electrodes may be electrically connected topackage substrate 810 via metal bump layer 806 and pad layer 807. Afterstage 925, sub-process 92 as well as process 900 may conclude.

INDUSTRIAL APPLICABILITY

The scope of the invention is not intended to be limited to the aboveembodiments. For example, although the disclosed embodiments aredescribed in association with GaN based blue or green LEDs (or UV-LEDbased purple) and GaN based flip-chip LED package structures, thedisclosed semiconductor and method for forming the semiconductor may beused on any other type of LED devices known in the art that includemultiple LED dies. Furthermore, the disclosed semiconductor can also beused for forming LED package structures other than flip-chip packagestructure for improving the current distribution and light emittingefficiency. In addition, although the present invention is describedwith an n-type doped layer being formed on the transparent layer, and ap-type doped layer being formed on the active layer, the presentinvention is also applicable with the conductive type of the dopedlayers being exchanged. That is, a p-type doped layer may be formed onthe transparent layer, and an n-type doped layer is formed on the activelayer.

The disclosed semiconductor may have p-electrodes and n-electrodesarranged alternately thereon and the distance between each p-electrodeand its adjacent n-electrodes is substantially constant, and thedistance between every two p-electrodes (or n-electrodes) issubstantially constant. The disclosed semiconductor can be served as anassembly of numerous parallel sub-dies, each of which has an equalcurrent flux while each sub-die has equal inner resistance and equalpotential difference. Therefore, the disclosed semiconductor and themethod for forming the same may effectively improve the currentdiffusion and current distribution. As a result, the disclosed systemmay improve the brightness and the light emission efficiency of LEDdevices.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the disclosed apparatus andmethod without departing from the scope of the disclosure. Additionally,other embodiments of the disclosed apparatus and method will be apparentto those skilled in the art from consideration of the specification. Itis intended that the specification and examples be considered asexemplary only, with a true scope of the disclosure being indicated bythe following claims and their equivalents.

1. A semiconductor, comprising: a transparent layer having a firstsurface; a first doped layer formed over the first surface of thetransparent layer, wherein the first doped layer has a pluralityfirst-type metal electrodes formed thereon; a second doped layer formedover the first surface of the transparent layer, wherein the seconddoped layer has a plurality of second-type metal electrodes formedthereon; and an active layer formed over the first surface of thetransparent layer and disposed between the first doped layer and thesecond doped layer, wherein the first-type metal electrodes and thesecond-type metal electrodes are alternately arranged such that eachfirst-type metal electrode is surrounded by at least four adjacentsecond-type metal electrodes, wherein the distances between eachfirst-type metal electrode and the at least four adjacent second-typemetal electrodes are substantially equal.
 2. The semiconductor of claim1, wherein the first doped layer, the second doped layer and the activelayer are comprised of a semiconductor material of a III-V groupcompound.
 3. The semiconductor of claim 2, wherein the first doped layeris an n-GaN layer, and wherein the second doped layer is a p-GaN layer.4. The semiconductor of claim 1, wherein current distributions at eachfirst-type metal electrode are substantially uniform.
 5. Thesemiconductor of claim 1, wherein current distributions at eachsecond-type metal electrode are substantially uniform.
 6. Thesemiconductor of claim 1, wherein the potential differences between thefirst-type metal electrode and the second-type metal electrode in theelectrode pairs are substantially equal.
 7. The semiconductor of claim6, wherein each first-type metal electrode has a first equal potentialand each second-type metal electrode has a second equal potential. 8.The semiconductor of claim 1, further comprising a first metal wire pathformed on the first doped layer for connecting at least two first-typemetal electrodes, and a second metal wire path formed on the seconddoped layer for connecting at least two second-type metal electrodes. 9.The semiconductor of claim 1, wherein the area of each first-type metalelectrode is substantially equal to the area of the each second-typemetal electrode.
 10. The semiconductor of claim 1, wherein thesemiconductor is a light-emitting diode.
 11. The semiconductor of claim1, wherein the transparent layer comprises a sapphire substrate.
 12. Thesemiconductor of claim 1, wherein the active layer comprises at leastone multi-quantum well.
 13. A flip-chip light emitting diode packagestructure, comprising: a package substrate; and a light emitting diodedevice comprising: a transparent layer having a first surface and asecond surface opposite to the first surface; a first doped layer formedover the first surface of the transparent layer, wherein the first dopedlayer has a plurality of first-type metal electrodes formed thereon; asecond doped layer formed over the first surface of the transparentlayer, wherein the second doped layer has a plurality of second-typemetal electrodes formed thereon; and an active layer formed over thefirst surface of the transparent layer and disposed between the firstdoped layer and the second doped layer, wherein the first-type metalelectrodes and the second-type metal electrodes are alternatelyarranged, wherein the distances between each first-type metal electrodeand its adjacent second-type metal electrodes are substantially equal,wherein the light emitting diode device is faced-down and flipped on thepackage substrate with the second surface of the transparent layerfacing away from the package substrate and the light emitting diodedevice is electrically connected to the package substrate through thefirst-type metal electrodes and the second-type metal electrodes. 14.The flip-chip light emitting diode package structure of claim 13,further comprising a metal bump layer and a pad layer formed between thepackage substrate and the second doped layer, providing currentconduction paths and heat dissipation paths between the packagesubstrate and the second doped layer.
 15. A method for forming asemiconductor, comprising: providing a transparent layer having a firstsurface; forming a first doped layer over the first surface of thetransparent layer, wherein the first doped layer has a plurality offirst-type metal electrodes formed thereon; forming an active layer overthe first surface of the transparent layer; and forming a second dopedlayer over the first surface of the transparent layer, wherein thesecond doped layer has a plurality of second-type metal electrodesformed thereon, wherein the first-type metal electrodes and thesecond-type metal electrodes are alternately arranged such that eachfirst-type metal electrode is surrounded by at least four adjacentsecond-type metal electrodes, wherein the distances between eachfirst-type metal electrode and the at least four adjacent second-typemetal electrodes are substantially equal.
 16. The method of claim 15,wherein the first doped layer, the second doped layer and the activelayer are comprised of a semiconductor material of a III-V groupcompound.
 17. The method of claim 16, wherein the first doped layer isan n-GaN layer, and wherein the second doped layer is a p-GaN layer. 18.The method of claim 15, further comprising forming a first metal wirepath on the first doped layer for connecting at least two first-typemetal electrodes, and a second metal wire path formed on the seconddoped layer for connecting at least two second-type metal electrodes.19. The method of claim 15, further comprising: providing a packagesubstrate; flipping the semiconductor on the package substrate with thesecond surface of the transparent layer facing away from the packagesubstrate; and electrically connecting the semiconductor to the packagesubstrate through the first-type metal electrodes and the second-typemetal electrodes.
 20. The method of claim 19, further comprising:forming a metal bump layer and a pad layer between the package substrateand the second doped layer, wherein each of the metal bump layer and thepad layer provides current conduction paths and heat dissipation pathsbetween the package substrate and the second doped layer.